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Low temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires

机译:低温光致发光成像和时间分辨光谱   单个Cds纳米线

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摘要

Time-resolved photoluminescence (PL) and micro-PL imaging were used to studysingle CdS nanowires at 10 K. The low-temperature PL of all CdS nanowiresexhibit spectral features near energies associated with free and bound excitontransitions, with the transition energies and emission intensities varyingalong the length of the nanowire. In addition, several nanowires show spatiallylocalized PL at lower energies which are associated with morphologicalirregularities in the nanowires. Time-resolved PL measurements indicate thatexciton recombination in all CdS nanowires is dominated by non-radiativerecombination at the surface of the nanowires.
机译:时间分辨光致发光(PL)和微PL成像用于研究10 K下的单根CdS纳米线。所有CdS纳米线的低温PL均表现出与自由和束缚激子跃迁相关的能量附近的光谱特征,且跃迁能量和发射强度随其变化纳米线的长度。另外,几条纳米线在较低的能量处显示出空间局部的PL,这与纳米线中的形态不规则性有关。时间分辨的PL测量表明,所有CdS纳米线中的激子复合均以纳米线表面的非辐射复合为主导。

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